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We investigate the electronic structures of some defective boron nitridenanotubes (BNNTs) under transverse electric fields within density-functionaltheory. (16,0) BNNTs with antisite, carbon substitution, single vacancy, andStone-Wales 5775 defects are studied. Under transverse electric fields, theband gaps of the defective BNNTs are reduced, similar to the pristine ones. Theenergy levels of the defect states vary with the transverse electric fielddirections, due to the different electrostatic potential shift at the defectsites induced by the electric fields. Therefore, besides electronic structureand optical property engineering, the transverse electric field can be used toidentify the defect positions in BNNTs.

Electronic structures of defective BN nanotubes under transverse electric fields