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Here, we report the existence of large remnant polarization and dielectricconstant in PbTiO3 buffered polycrystalline (BiFeO_3)_{1-x} (PbTiO_3)_x thinfilms of composition x = 0.25, 0.30 and 0.35 around the morphotropic phaseboundary. The films were deposited by chemical solution deposition onplatinized silicon substrates. Films reveal a perovskite structure with atendency to retain rhombohedral structure even at higher PbTiO_3 content thanthat reported in bulk. We observe very large remnant polarization, ~75microC/cm^2, and high dielectric constant, ~2400 at 1 kHz for x = 0.3, whichlies in the MPB composition range. The unbuffered films show less than 1microC/cm^2 for the same composition.

Existence of Large Room Temperature Ferroelectricity in Chemical Solution Grown PbTiO3 Buffered (BiFeO3)1-x-(PbTiO3)x Films on Pt/Si Substrates