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We have performed angle-resolved photoemission spectroscopy (ARPES)measurements and first-principles electronic structure calculations on theelectron-doped high-Tc superconductors Ln1.85Ce0.15CuO4 (Ln = Nd, Sm, and Eu).The observed Fermi surface and band dispersion show such changes that withdecreasing ionic size of Ln3+, the curvature of the Fermi surface or -t'/tdecreases, where t and t' are transfer integrals between the nearest-neighborand next-nearestneighbor Cu sites, respectively. The increase of t withchemical pressure is found to be significant, which may explain the apparentlyinconsistent behavior seen in the hole-doped La2-xSrxCuO4 under epitaxialstrain [M. Abrecht et al., Phys. Rev. Lett. 91, 057002 (2003)]. A gap due tothe antiferromagnetism opens even in the nodal region for the Sm and Eucompounds, and the gap size increases in going from Ln = Sm to Eu.

Effects of chemical pressure on the Fermi surface and band dispersion in the electron-doped high-Tc superconductors