English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We report the first evidence of electron-mediated ferromagnetism in amolecular-beam-epitaxy (MBE) grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructurewith Mn $\delta$-doping. The interaction between the magnetic dopants (Mn) andthe Two-Dimensional Electron Gas (2DEG) realizes magnetic ordering when thetemperature is below the Curie temperature ($T_{C} \sim 1.7K$) and the 2DEG isbrought in close proximity to the Mn layer by gating. The Anomalous Hall Effect(AHE) contribution to the total Hall resistance is shown to be about three tofour orders of magnitude smaller than in the case of hole-mediatedferromagnetism indicating the presence of small spin-orbit interaction.

Electron-mediated ferromagnetism and small spin-orbit interaction in a  molecular-beam-epitaxy grown n-type $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure  with Mn $\delta$-doping