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Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) andshot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100)magnetic tunnel junctions, as a function of the magnetic state. The junctionsshow large tunnel magnetoresistance (185% at 300K and 330% at 4K). Multiplesign inversion of the magnetoresistance is observed for bias polarity when theelectrons scan the electronic structure of the bottom Fe-C interface. Theshot-noise shows a Poissonian character. This demonstrates a pure spindependent direct tunneling mechanism and validates the high structural qualityof the MgO barrier.

High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions