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A new Room Temperature (RT) 0-level vacuum package is demonstrated in thiswork, using amorphous silicon (aSi) as sacrificial layer and SiO2 as structurallayer. The process is compatible with most of MEMS resonators and ResonantSuspended-Gate MOSFET [1] fabrication processes. This paper presents a study onthe influence of releasing hole dimensions on the releasing time and holeclogging. It discusses mass production compatibility in terms of packagingstress during back-end plastic injection process. The packaging is done at roomtemperature making it fully compatible with IC-processed wafers and avoidingany subsequent degradation of the active devices.

0-level Vacuum Packaging RT Process for MEMS Resonators