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Thermal FEM (Finite Element Method) simulations can be used to predict thethermal behavior of power semiconductors in application. Most powersemiconductors are made of silicon. Silicon thermal material properties aresignificantly temperature dependent. In this paper, validity of a commonnon-linear silicon material model is verified by transient non-linear thermalFEM simulations of Smart Power Switches and measurements. For verification,over-temperature protection behavior of Smart Power Switches is employed. Thisprotection turns off the switch at a pre-defined temperature which is used as atemperature reference in the investigation. Power dissipation generated duringa thermal overload event of two Smart Power devices is measured and used as aninput stimulus to transient thermal FEM simulations. The duration time of theevent together with the temperature reference is confronted with simulationresults and thus the validity of the silicon model is proved. In addition, theimpact of non-linear thermal properties of silicon on the thermal impedance ofpower semiconductors is shown.

Transient Non-linear Thermal FEM Simulation of Smart Power Switches and Verification by Measurements