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Nanostructured TiO2 thin films were prepared by pulsed laser deposition (PLD)on indium doped tin oxide (ITO) substrates. Results from X-ray photoelectronspectroscopy (XPS) show that Ti 2p core level peaks shift toward the lowerbinding energy with decrease in the buffer gas pressure (O2:Ar = 1:1). Thissuggests that oxygen vacancies are created under insufficient oxygenconditions. Anatase to rutile ratio is also found to be system pressuredependent. Under deposition pressure of 750 mTorr only anatase phase wasobserved even at 1073 K substrate temperature which is much higher that thebulk anatase to rutile phase transformation temperature. The deposited TiO2thin films were fabricated as photoanodes for photoelectrochemical (PEC)studies. PEC measurements on TiO2 photoanodes show that the flatband potential(Vfb) increases by 0.088 eV on absolute vacuum energy scale (AVS) with decreasein the deposition pressure, from 750 to 250 mTorr at 873K. The highest incidentphoton to current conversion efficiency [IPCE(lambda)] of 2.5 to 6 % wasobtained from the thin films prepared at substrate temperature of 873K.Combining the results from XPS and PEC studies, we conclude that the depositionpressure affects the concentration of the oxygen vacancies which changes theelectronic structure of the TiO2. With reference to photoelectrochemicalcatalytic performance, our results suggest that it is possible to adjust theFermi energy level and structure of TiO2 thin films by controlling the buffergas pressure and temperature to align the energy of the flatband potential(Vfb) with respect to specific redox species in the electrolyte.

Photocatalytic Activity of Pulsed Laser Deposited TiO2 Thin Films