English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We present details of our experimental and theoretical study of thecomponents of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We developexperimental methods to yield directly the non-crystalline and crystalline AMRcomponents which are then independently analyzed. These methods are used toexplore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)Aslayers and to demonstrate how the components of the AMR can be engineeredthrough lithography induced local lattice relaxations. We expand on ourprevious [Phys. Rev. Lett. \textbf{99}, 147207 (2007)] theoretical analysis andnumerical calculations to present a simplified analytical model for the originof the non-crystalline AMR. We find that the sign of the non-crystalline AMR isdetermined by the form of spin-orbit coupling in the host band and by therelative strengths of the non-magnetic and magnetic contributions to theimpurity potential.

The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices