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We theoretically demonstrate that a resonant inelastic x-ray scattering  (RIXS) with a sizable momentum transfer can be utilized to study valence banddispersion for broad band materials. We take RIXS at the Si K edge of 3C-SiC asa typical example. The RIXS spectra are calculated by systematically changingthe transferred momentum, an incident photon polarization and an incidentphoton energy, on the basis of an ab initio calculation. We find that thespectra depend heavily on both the transferred momentum and the incident photonpolarization, and the peaks in the spectra correspond to the energies of thevalence bands. We conclude that the information on the energy dispersion ofvalence bands can be extracted from the transferred momentum dependence of theRIXS spectra. These findings lead to further application for RIXS wheninvestigating the band structure of broad band materials.

Momentum-dependent resonant inelastic X-ray scattering at the Si K edge  of 3C-SiC: A theoretical study on a relation between spectra and valence band  dispersion