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Electric field gradient effects induced by an asymmetrically in-plane shapedGaAs/AlGaAs modulation-doped structures of various design are investigatedwithin 4-300 K temperature range. It is demonstrated that current-voltagecharacteristics of such structures at low, 4-80 K, temperatures exhibitwell-pronounced asymmetry arising due to a presence of two different gradientsof the electric field in a two dimensional electron gas. This phenomenon iscaused by both, different accumulation of two-dimensional electrons due toasymmetrical shape of the structure and nonlocality in the electron driftvelocity. Experiments are illustrated by a phenomenological model and MonteCarlo simulation. Possible applications of the effect to detect electromagneticradiation of GHz and THz frequencies are discussed as well.

Electric field gradient induced effects in GaAs/AlGaAs modulation-doped structures and high frequency sensing