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Silicon stripixel sensors which were developed at BNL will be installed aspart of the RHIC-PHENIX silicon vertex tracker (VTX). RHIC II operationsprovide luminosity up to 2x10^32 /cm2/s so the silicon stripixel sensors willbe exposed to a significant amount of radiation. The most problematic radiationeffect for VTX is the increase of leakage current, which degrades the signal tonoise ratio and may saturate the readout electronics.  We studied the radiation damage using the same diodes as CERN-RD48. First,the proportionality between the irradiation fluence and the increase of leakagecurrent of CERN-RD48 was reproduced. Then beam experiments with stripixelsensor were done in which leakage current was found to increase in the same wayas that of thereference diode.  A stripixel sensor was also irradiated at the PHENIX interaction region (IR)during the 2006 run. We found the same relation between the integratedluminosity and determined fluence from increase of leakage current. Theexpected fluence is 3-6x10^12 Neq/cm2 (1 MeV neutron equivalent) in RHIC IIoperations for 10 years. Due to this expected exposure, setting the operatingtemperature in PHENIX to T< 0 deg. C to suppress leakage current is needed toavoid saturation of preamplifiers.

Radiation Damage Study for PHENIX Silicon Stripixel Sensors