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The ability to integrate carbon nanotubes, especially single-walled carbonnanotubes, seamlessly onto silicon would expand the range of applicationsconsiderably. Though direct integration using chemical vapor deposition is thesimplest method, the growth of single-walled carbon nanotubes on bare siliconand on ultra-thin oxides is greatly inhibited due to the formation of anon-catalytic silicide. Using x-ray photoelectron spectroscopy, we show thatsilicide formation occurs on ultra-thin oxides due to thermally activated metaldiffusion through the oxide. Silicides affect the growth of single-wallednanotubes more than multi-walled nanotubes due to the increased kinetics at thehigher single-walled nanotube growth temperature. We demonstrate that nickeland iron catalysts, when deposited on clean silicon or ultra-thin silicondioxide layers, begin to form silicides at relatively low temperatures, andthat by 900C, all of the catalyst has been incorporated into the silicide,rendering it inactive for subsequent single-walled nanotube growth. We furthershow that a 4 nm silicon dioxide layer is the minimum diffusion barrierthickness which allows for efficient single-walled nanotube growth.

Critical Oxide Thickness for Efficient Single-walled Carbon Nanotube Growth on Silicon Using Thin SiO2 Diffusion Barriers