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We calculated functions for the potential, Vch, in the channel of a fieldeffect transistor with various densities of the localized states (DOS) by usinga device simulator. In the saturation condition, Vch is found to fitsatisfactorily to the analytical function, Vch(y)=Vg(1-(1-y/L) k), where Vg isthe gate bias, y is the position along the channel, and L is the channellength. The power k, which depends on the DOS, ranges from 0 to 0.5 even withan extensive variation of DOS. As a result, the total induced charge density inthe saturation condition can be expressed a way similar to the linear conditionby introducing a correction factor, alpha, ranging between 0.65 and 1.0.

Calculation of DOS-Dependent Channel Potentials in FETs in the Saturation Condition