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Epitaxial MgB2 thick films were grown on Al2O3 substrates at 600 oC by usingthe hybrid physical chemical vapor deposition (HPCVD) technique. In order toobtain a high magnesium vapor pressure around the substrates, we used a specialsusceptor having a susceptor cap and achieved a very high growth rate of 0.17um/min. Hexgonal-shaped columnar structures were observed by cross-sectionaland planar view transmission electron microscope (TEM) images. For the1.7-um-thick film, the Tc was observed to be 40.5 K with a Jc of 1.5 x 10^6A/cm^2 at 30 K. The vortex pinning mechanism by intercolumnar boundaries willbe discussed.

Growth of Epitaxial MgB2 Thick Films with Columnar Structures by Using HPCVD