English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

High linear voltage references circuitry are designed and implemented in TSMC0.18$\mu$m CMOS technology. Previous research has proposed the use of MOStransistors operating in the weak inversion region to replace the bipolardevices in conventional PTAT(proportional to absolute temperature) circuits.However such solutions often have linearity problem in high temperature regiondue to the current leaking devices in modern deep sub micron and nano-scaleCMOS technology. The proposed circuit utilized temperature complementationtechnique on two voltage references, PTAT and IOAT (independent of absolutetemperature) references, to enhance the linearity and produce a more stableIOAT voltage reference. Base on the simulation results, the R-squares of bothcircuitries are better than 0.999 in a considerable wider temperature rangefrom -55 degrees C to 170 degrees C. Thus, a fully integrated temperaturesensor with wider temperature range is designed and easily to integrate tomodern system-on-chip designs with minimal efforts.

-55 degrees C to 170 degrees C High Linear Voltage References Circuitry in 0.18\`im Cmos Technology