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Investigation of electrical conduction in polysilicon nanowires (polySiNW)with nanograins (5 to 20nm), based on Monte Carlo (MC) simulations andelectrical measurements from 4K to 300K are presented. Some irregular CoulombOscillations (CO) are observed at temperatures lower than 200K showing severalperiod widths due to the random distribution in grain size (5-20nm). Aremarkable result consists in more effective oscillations observed atintermediate range of temperatures (between 25K and 150K) and high drainvoltages. The temperature dependence of COs is explained by the fact that in amultiple asymmetric dot system at low temperature, COs are observed not at thelowest but at an intermediate temperature range, whereas the drain voltagedependence is due to an enhanced non-resonant tunneling. MC simulations haveconfirmed experimental observations.

Low Temperature Investigation of Electrical Conduction in Polysilicon: Simulation and Experiment