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We have studied the 1.5 $\mu$m photoluminescence (PL) from Er ions afterannealing two different sample sets in the temperature range 500 &deg;C to 1100&deg;C. The different sample sets were made by magnetron sputtering fromcomposite targets of Si+SiO2+Er and Ge+SiO2+Er respectively for the differentsample sets. The annealing induces Si - and Ge-nanoclusters respectively in thedifferent film sets. The PL peak reaches its maximum intensity after annealingat 700 &deg;C for samples with Ge nanoclusters and after annealing at 800&deg;C for samples with Si. No luminescence from nanoclusters was detected inneither sample sets. This is interpreted as an energy transfer from thenanocluster to Er atoms. Transmission electron microscopy shows that afterannealing to the respective temperature yielding the maximum PL intensity boththe Ge and Si clusters are non-crystalline. Here we mainly compare the spectralshape of Er luminescence emitted in these different nanostructured matrixes.The PL spectral shapes are clearly different and witness a different localenvironment for the Er ions.

A Comparison between 1.5$\mu$m Photoluminescence from Er-Doped Si-Rich Sio2 Films and (Er,Ge) Co-Doped Sio2 Films