English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

We have prepared light emitting nanocrystalline porous silicon (PS) layers byelectrochemical anodization of crystalline silicon (c-Si) wafer andcharacterized the c-Si/PS heterojunctions using temperature dependence of darkcurrent-voltage (I-V) characteristics. The reverse bias I-V characteristics ofc-Si/PS heterojunctions are found to behave like Schottky junctions wherecarrier transport is mainly governed by the carrier generation-recombination inthe depletion region formed on the PS side. Fermi level of c-Si gets pinned tothe defect levels at the interface resulting in ln(I) proportional to V^0.5.The barrier height in the reverse bias condition is shown to be equal to theband offset at the conduction band edges. An energy band diagram for thec-Si/PS heterojunction is proposed.

Band edge discontinuities and carrier transport in c-Si/porous silicon heterojunctions