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We report on the phototransport properties of microstructurally wellcharacterized plasma deposited highly crystallized microcrystalline siliconfilms. The steady state photoconductivity was measured on a widemicrostructural variety of single-phase undoped microcrystalline silicon filmsas a function of temperature and light intensity. The band-tail parameter (kTc)was calculated from the photoconductivity light intensity exponent values atdifferent temperatures for a range of quasi-Fermi energies. The localized tailstates distribution in the vicinity of conduction band edge of microcrystallinesilicon was estimated using the values of kTc. Our study shows thatmicrocrystalline silicon films possessing dissimilar microstructural attributesexhibit different phototransport behaviors, which are linked to differentfeatures of the density of states maps of the material.

Determination of localized conduction band-tail states distribution in single phase undoped microcrystalline silicon