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We report here the first observation of a pyroelectric effect in a non-polarsemiconductor. This effect originates in the temperature dependent electricdipole of the p-n junction. The junction was illuminated by a chopped CO2 laserbeam, and periodic and single-pulse pyroelectric signals were observed andmeasured as a function of temperature, reverse bias voltage and chopperfrequency. The measured pyroelectric coefficient is about 10^(-3) microC/cm2Kin the region of 40-80 K. The theoretical model describes quantitatively allexperimental features. The time evolution of the temperature inside thejunction region was reconstructed.

Pyroelectric Effect Induced by the Built-in Field in the p-n Junction of the Quantum Paraelectric PbTe: Experimental Study