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Results of room temperature measurements of tensoresistive effect of thinsingle crystal microwires of Pb1-xTlxTe (x=0.0000 - 0.0025, d = 5 - 20micrometers) obtained from the melted compound of corresponding composition bythe filling of quartz capillary with the following crystallization of materialare presented. For the samples corresponding to chemical composition withconcentration of thallium x ~0,0025 an essential increase of tensoresistiveeffect (resistance changes for elastic elongations per unit length of acrystal) in comparison with nondoped samples is observed. Various mechanismswhich can lead to observable anomalies, including resonance scattering arediscussed. Obtained experimental results allow us to suppose that the observedpeculiarities can be interpreted on the basis of model of an impurity band ofTl in PbTe.

Tensoresistive Effect in Single Crystal Microwires of Pbte Doped with Tl