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We study plasma effects in a micromachined high-electron mobility transistor(HEMT) with the microcantilever serving as the gate using the developed amodel. The model accounts for mechanical motion of the microcantilever andspatio-temporal variations (plasma effects) of the two-dimensional electrongas(2DEG) system in the transistor channel. The microcantilever mechanicalmotion is described in the point-mass approximation. The hydrodynamic electrontransport model is used to describe distributed electron plasma phenomena inthe 2DEG system. Using the developed model, we calculated the response functioncharacterizing the amplitude microcantilever oscillations and the outputelectric signal as functions of the signal frequency and the bias voltage forthe devices with different parameters. We find the voltage dependences of thefrequency of the mechanical resonance and its damping. In particular, it isdemonstrated that the amplitudes of the mechanical oscillations and outputelectric signal exhibit pronounced maxima at the bias voltages close to thevoltage of the 2DEG channel depletion followed by a steep drop with furtherincrease in the bias voltage.

Plasma effects in a micromachined floating-gate high-electron-mobility transistor