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Thin films of Co-TiO2 are deposited on silicon and quartz substrates usingPulse Laser Deposition (PLD) process at various oxygen partial pressuresranging from 6.6 x 10-3 Pascals (Pa) to 53 Pa. Crystal structure, transport andmagnetic properties of reduced CoxTi(1-x)O2 (0 <x< 0.03) thin films areinvestigated and are found to have a strong dependence on the oxygen partialpressure. X-ray diffraction (XRD) data reveals the presence of mixed phasematerial containing both anatase and rutile. However, these phasesintertransform with the change in the oxygen partial pressure in the chamberduring the growth of the films. X-ray Photoelectron Spectroscopy (XPS) shows noCo or CoO related peaks for samples with Co concentration up to x=0.03.However, the oxygen 1s peaks are asymmetric suggesting the presence of oxygenvacancies. The transport and magnetic measurements show a clear dependence onthe concentration of oxygen vacancies. There is an enhancement in theelectrical conductivity and the magnetization as more vacancies are created inthe material. The resistivity as a function of temperature rho(T) follows thepolaronic behavior and the activation energies obtained, ~100 to 150meV, arewithin the range that is typical for semiconducting materials.

Influence of oxygen partial pressure on structural, transport and magnetic properties of Co doped TiO2 films