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A real-space quantum transport simulator for carbon nanoribbon (CNR) MOSFETshas been developed. Using this simulator, the performance of carbon nanoribbon(CNR) MOSFETs is examined in the ballistic limit. The impact of quantum effectson device performance of CNR MOSFETs is also studied. We found that 2Dsemi-infinite graphene contacts provide metal-induced-gap-states (MIGS) in theCNR channel. These states would provide quantum tunneling in the short channeldevice and cause Fermi level pining. These effects cause device performancedegradation both on the ON-state and the OFF-state. Pure 1D devices (infinitecontacts), however, show no MIGS. Quantum tunneling effects are still playingan important role in the device characteristics. Conduction due to band-to-bandtunneling is accurately captured in our simulations. It is important in thesedevices, and found to dominate the off-state current. Based on our simulations,both a 1.4nm wide and a 1.8nm wide CNR with channel length of 12.5nm canoutperform ultra scaled Si devices in terms of drive current capabilities andelectrostatic control. Although subthreshold slopes in the forward-biasconduction are better than in Si transistors, tunneling currents are importantand prevent the achievement of the theoretical limit of 60mV/dec.

Ballistic Graphene Nanoribbon MOSFETs: a full quantum real-space simulation study