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From a detailed analysis of InN epilayers deposited in a close-coupledshowerhead metalorganic vapour phase epitaxy (MOVPE) system under variousconditions we investigate the effect of growth parameters on the latticeconstants of the InN layer. The layers are under significant internalhydrostatic stress which influences the optical properties. Samples typicallyfall into two broad categories of stress, with resultant luminescence emissionaround 0.8eV and 1.1eV. We can correlate the internal stress in the layer andthe value of the optical absorption edge, and the PL emission wavelength.

Influence of growth parameters on structural properties and bandgap of InN epilayers deposited in a showerhead MOVPE system