English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

A previously unknown effect-giant spatial redistribution of the electricfield strength in a crystal under illumination of the structure - wasdiscovered and investigated in real photoresistors on high-resistivity(semi-insulating) semiconductor CdTe crystals (in metal-thin insulator-semiconductor-thin insulator -metal structures).  A new concept is proposed for photoelectric phenomena in high- resistivitysemiconductor crystals. The concept is based on the idea that theredistribution of the field under such conditions that the carrier lifetimeremains unchanged under illumination plays a determining role in thesephenomena. The nature of the effect is described, the dependence of thecharacteristics of the structures on the parameters of the crystal and theinsulator layers is explained by the manifestation of this effect, and ways toproduce structures with prescribed photoelectric characteristics for newdevices and scientific methods are examined.

Photoelectric phenomena in structures based on high-resistivity  semiconductor crystals with a thin insulator layer at the semiconductor-metal  boundary