Open AccessEffects of the annealing temperature on microstructure and room-temperature ferromagnetism of N+ ion-implanted ZnO: Mn thin film
Author(s) -
杨天勇,
孔春阳,
阮海波,
秦国平,
李万俊,
梁薇薇,
孟祥丹,
赵永红,
方亮,
崔玉亭
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.168101
Subject(s) - materials science , ferromagnetism , microstructure , annealing (glass) , thin film , acceptor , sputter deposition , polaron , ion , doping , magnetic semiconductor , sputtering , analytical chemistry (journal) , condensed matter physics , optoelectronics , nanotechnology , metallurgy , chemistry , physics , organic chemistry , quantum mechanics , chromatography , electron
The Mn-N codoped ZnO thin films are fabricated on quartz glass substrates using the radio-frequency magnetron sputtering technique together with the direct N+ ion-implantation. The effects of annealing temperature on microstructure and room-temperature ferromagnetism of the thin films are investigated. The results indicate that both divalent Mn2+ and trivalent N3- ions are incorporated into ZnO lattice. As the annealing temperature increases, the lattice distortion induced by N+ ion-implantation can decrease, and the N3- may escape from the film, which results in the reducing of acceptor (NO) concentration. Ferromagnetism is observed in the (Mn,N)-codoped ZnO thin film at 300 K and found to be the sensitive to the acceptor concentration. The mechanism of room-temperature ferromagnetism in the ZnO:(Mn, N) is discussed based on the bound magnetic polaron model.