Open AccessGrowth and chracterization of Zn1- x-y Na x Co y O thinfilms prepared by pulsed laser deposition
Author(s) -
李世帅,
冯秀鹏,
黄金昭,
刘春彦,
张仲,
陶冶微
Publication year - 2011
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.60.057105
Subject(s) - materials science , pulsed laser deposition , doping , analytical chemistry (journal) , thin film , electrical resistivity and conductivity , deposition (geology) , diffraction , optics , nanotechnology , optoelectronics , chemistry , paleontology , physics , sediment , biology , engineering , chromatography , electrical engineering
Zn1-x-yNaxCoyO thin films were prepared by pulsed laser deposition (PLD) on Si(111) substrates. The X-ray diffraction(XRD), atomic force microscopy(AFM), fluorescence spectrometer and the Four-probe tester were used respectively to investigate the structure, surface structure, optical and electrical properties of the thin films. The optical and electrical properties of Zn1-x-yNaxCoyO doped with different Na-Co concentrations are investigated. The result indicates that the structure of films are zincite and the doping of Na-Co leads to the red-shift of the UV emission peak of ZnO. When the doping concentration of both Na and Go are 10%, the film has the highest fluoresence intensity located at 397 nm, and the lowest resistivity of 8.34×10-1 Ω ·cm is detected in this film. The reasons of above-mentioned phenomena are discussed in depth.