Open AccessAn XPS study on the structure of SiNx film deposited by microwave ECR magnetron sputtering
Author(s) -
Ding Wan-Yu,
Jun Xu,
Wenqi Lu,
Deng Xinlu,
Chuang Dong,
()大连交通大学光电材料与器件研究所，大连 ；大连理工大学三束材料改性国家重点实验室，大连 ; ()大连理工大学三束材料改性国家重点实验室，大连
Publication year - 2009
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.4109
Subject(s) - x ray photoelectron spectroscopy , materials science , electron cyclotron resonance , sputter deposition , analytical chemistry (journal) , stoichiometry , sputtering , cavity magnetron , volumetric flow rate , microwave , thin film , plasma , nanotechnology , chemical engineering , chemistry , quantum mechanics , physics , engineering , chromatography
Hydrogen-free SiNx films were deposited at N2 flow rate ranging from 1 sccm to 20 sccm by microwave electron cyclotron resonance plasma enhanced unbalance magnetron sputtering system. We studied the influence of N2 flow rate on the structural characteristics of deposited films in chemical structure, stoichiometry, composition at different depths in film, and hardness by using X-ray photoelectron spectroscopy and nano-indantation. The results indicate that the films deposited at low N2 flow rate are Si-rich structure. The films deposited at 2 sccm N2 flow rate show an excellent stoichiometry with 94.8% Si—N bond content and uniformity of composition in different depths. At the same time, the films display the highest hardness value of 22.9 GPa. The films deposited at high N2 flow rate contain too much N—Si—O bond and Si—O bond, which is caused by chemical absorption both on and in film in atmosphere. The films present N-rich structure. In this situation, the films display poor mechanical properties with hardness of only 12 GPa.
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