Open AccessTransport properties and photo-induced effect in La0.82Te0.18MnO3 thin film
Author(s) -
Wang Jian-Yuan,
Changle Chen,
Gao Guo-Mian,
Han Li-An,
Jin Ke-Xin,
()西北工业大学理学院，西安 ; ()西北工业大学理学院，西安 ;空军工程大学理学院，西安
Publication year - 2006
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.6617
Subject(s) - materials science , electrical resistivity and conductivity , thin film , condensed matter physics , polaron , pulsed laser deposition , scattering , relaxation (psychology) , phase (matter) , laser , scattering rate , doping , metal , superconductivity , optics , optoelectronics , nanotechnology , physics , psychology , social psychology , quantum mechanics , metallurgy , electron
The transition from the metallic phase to the nonconductive phase occurred at 283 K in La0.82Te0.18MnO3 thin film prepared by pulse laser deposition method. The transport results show that the data satisfy the formula of electro-electro and electro-magnon scattering for TTMI; when T>TMI it agrees with small polaron transport model. The effect of the continuous wave laser(532 nm40 mW) on the film was also investigated. Below TMI, the resistivity has a photo-induced increase. The maximum rate of resistivity changes(Δρ/ρ0) can reach 51.1% which is much greater than that of hole-doped manganites. Above TMI there is a photoconduction. The relaxation was observed in the experiment when the laser was turned on and off. The resistively is exponentially related with the time.
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