Open AccessCharacterization of silicon nitride films prepared by MW-ECR magnetron sputtering
Author(s) -
Wanyu Ding,
Jingdong Xu,
Yanqin Li,
Piao Yong,
Peng Gao,
Xianmo Deng,
Dong Chen
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.1363
Subject(s) - materials science , electron cyclotron resonance , silicon nitride , sputtering , stoichiometry , sputter deposition , analytical chemistry (journal) , fourier transform infrared spectroscopy , nitride , silicon , thin film , plasma , optoelectronics , nanotechnology , chemical engineering , chemistry , layer (electronics) , engineering , physics , chromatography , quantum mechanics
Hydrogen-free silicon nitride films were deposited at room temperature by microw ave electron cyclotron resonance (ECR) plasma source enhanced unbalanced magnetr on sputtering system. Fourier-transform infrared spectroscopy and X-ray photoele ctron spectroscopy were used to study the bond type, the change of bond structur es, and the stoichiometry of the silicon nitride films. Atomic-force microscopy and nano-indentation were used to study the morphological features and mechanica l characteristics of the films. The results indicate that the structure and char acteristics of the films deposited by this technique depend strongly on the dens ity of sputtered Si in plasma and the films deposited at 4 sccm N2 fl ow show excellent stoichiometry and properties.