Open AccessSOI MOSFET转移特性中的深度饱和现象研究
Author(s) -
HAO YUE,
ZHU JIAN-GANG,
GUO LIN,
ZHANG ZHENG-FAN
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.120
Subject(s) - mosfet , silicon on insulator , materials science , computer science , optoelectronics , physics , silicon , transistor , voltage , quantum mechanics