Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si&lt;sub&gt;1-y&lt;/sub&gt;Niy:H at Very Low Temperature with Magnetic Field | Zendy

A. Narjis | Zendy; A. El kaaouachi | Zendy; J. Hemine | Zendy; A. Sybous | Zendy; L. Limouny | Zendy; Said Dlimi | Zendy; R. Abdia | Zendy; Gerard Buskipski | Zendy

Open Access

Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si<sub>1-y</sub>Niy:H at Very Low Temperature with Magnetic Field

Author(s) -

A. Narjis,

A. El kaaouachi,

J. Hemine,

A. Sybous,

L. Limouny,

Said Dlimi,

R. Abdia,

Gerard Buskipski

Publication year - 2012

Publication title -

journal of modern physics

Language(s) - English

Resource type - Journals

eISSN - 2153-120X

pISSN - 2153-1196

DOI - 10.4236/jmp.2012.36061

Subject(s) - magnetoresistance , condensed matter physics , electrical resistivity and conductivity , amorphous solid , materials science , coulomb , magnetic field , metal–insulator transition , amorphous silicon , nickel , atmospheric temperature range , amorphous metal , silicon , metal , physics , chemistry , electron , metallurgy , thermodynamics , crystalline silicon , crystallography , quantum mechanics

We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si_1-yNi_y:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T ^-1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level

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