Evaluation of 1/f Noise Characteristics for Si‐Based Infrared Detection Materials | Zendy

Ryu Hojun | Zendy; Kwon Sein | Zendy; Cheon Sanghoon | Zendy; Cho Seong Mok | Zendy; Yang Woo Seok | Zendy; Choi Chang Auck | Zendy

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Evaluation of 1/f Noise Characteristics for Si‐Based Infrared Detection Materials

Author(s) -

Ryu Hojun,

Kwon Sein,

Cheon Sanghoon,

Cho Seong Mok,

Yang Woo Seok,

Choi Chang Auck

Publication year - 2009

Publication title -

etri journal

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.295

H-Index - 46

eISSN - 2233-7326

pISSN - 1225-6463

DOI - 10.4218/etrij.09.1209.0014

Subject(s) - plasma enhanced chemical vapor deposition , materials science , silicon , antimony , sputtering , chemical vapor deposition , amorphous silicon , optoelectronics , sputter deposition , amorphous solid , thin film , nanotechnology , crystalline silicon , metallurgy , chemistry , organic chemistry

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma‐enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/ f noise level compared to plasma‐enhanced chemical vapor deposition (PECVD)‐deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/ f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.

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