Open AccessSimulation to Study the Effect of Carrier Concentration on I-V Characteristics of Schottky Diode
Author(s) -
Rajnikant Sharma
Publication year - 2015
Publication title -
journal of material sciences and engineering
Language(s) - English
Resource type - Journals
ISSN - 2169-0022
DOI - 10.4172/2169-0022.1000213
Subject(s) - schottky diode , diode , optoelectronics , materials science , schottky barrier , engineering physics , electrical engineering , computer science , engineering