Open AccessMemristive Phase Change Memory
Author(s) -
Manish Bilgaye,
Adesh Kumar,
Anurag Srivastava,
Piyush Dua
Publication year - 2019
Publication title -
international journal of engineering and advanced technology
Language(s) - English
Resource type - Journals
ISSN - 2249-8958
DOI - 10.35940/ijeat.a1414.109119
Subject(s) - phase change memory , chalcogenide , spice , phase change , materials science , phase (matter) , non volatile memory , amorphous solid , phase change material , process (computing) , optoelectronics , electronic engineering , computer science , engineering physics , crystallography , engineering , chemistry , organic chemistry , operating system
The paper presents study on and simulation of resistive nonvolatile phase change memory (PCM) cell in NG Spice programming environment. The chalcogenide alloy based PCM cell model demonstrates switching between amorphous and crystalline phases. The crystalline factor, responsible for the phase change process, is programmed by applied variable electrical pulse. Parameters phase change, range of operating temperature, the crystalline factor are mapped and presented.