Open AccessResearch of high-voltage complementary junction field-effect transistors over a range of temperature using methods of TCAD process/device modeling
Author(s) -
D.G. Drozdov,
N. Prokopenko,
Ye.M. Savchenko,
Pavel A. Dukanov,
Andrey I. Grushin,
Pulsar Scientific,
Ippm Ras
Publication year - 2020
Publication title -
problemy razrabotki perspektivnyh mikro- i nanoèlektronnyh sistem ...
Language(s) - English
Resource type - Journals
ISSN - 2078-7707
DOI - 10.31114/2078-7707-2020-4-66-75
Subject(s) - materials science , optoelectronics , field effect transistor , process (computing) , engineering physics , transistor , junction temperature , range (aeronautics) , atmospheric temperature range , voltage , electronic engineering , electrical engineering , computer science , engineering , physics , thermodynamics , thermal , composite material , operating system