Open AccessSimulation of charge accumulation in silicon photomultipliers under the influence of soft X-rays
Author(s) -
D. A. Aharodnikau
Publication year - 2022
Publication title -
vescì nacyânalʹnaj akadèmìì navuk belarusì. seryâ fìzìka-matèmatyčnyh navuk
Language(s) - English
Resource type - Journals
eISSN - 2524-2415
pISSN - 1561-2430
DOI - 10.29235/1561-2430-2022-58-3-337-343
Subject(s) - silicon photomultiplier , shallow trench isolation , trench , passivation , optoelectronics , materials science , irradiation , electric field , silicon , charge density , oxide , charge (physics) , layer (electronics) , optics , physics , nanotechnology , scintillator , quantum mechanics , detector , nuclear physics , metallurgy