Open AccessНелинейные эффекты при распылении арсенида галлия и кремния кластерными ионами висмута
Author(s) -
A. Tolstogouzov,
П.А. Мажаров,
А.Е. Иешкин,
F. Meyer,
D.J. Fu
Publication year - 2022
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2022.05.52150.19071
Subject(s) - sputtering , ion , yield (engineering) , atomic physics , kinetic energy , atom (system on chip) , materials science , chemistry , physics , nanotechnology , metallurgy , thin film , computer science , organic chemistry , quantum mechanics , embedded system
An experimental study on the influence of the energy and the number of atoms in the bombarding ions Bin+ (n = 1-4) on the sputter yield of GaAs was carried out. It was shown that the specific sputter yield Ysp nonadditively increase with an increasing of n and specific kinetic energy Esp per an atom in the bombarding ion, and the efficiency of energy transfer from bombarding ions to target atoms also increases with an increasing of n. A comparison was made with the previously obtained results for Si targets.