Open AccessБыстродействующие фотодетекторы на основе квантовых ям-точек InGaAs/GaAs
Author(s) -
С.А. Минтаиров,
С.А. Блохин,
Н.А. Калюжный,
М.В. Максимов,
Н.А. Малеев,
А.М. Надточий,
Р.А. Салий,
Н.В. Крыжановская,
А.Е. Жуков
Publication year - 2022
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2022.04.52082.19059
Subject(s) - photodetector , optoelectronics , bandwidth (computing) , gallium arsenide , materials science , thermalisation , limit (mathematics) , physics , computer science , telecommunications , quantum mechanics , mathematics , mathematical analysis
High-speed photodetectors (PDs) based on InGaAs/GaAs quantum well-dots (QWDs) nanostructures are investigated. The -3 dB bandwidth of 8.2 GHz at 905 nm has been demonstrated. It is shown that internal processes in QWDs make it possible to create a PD with a bandwidth of up to 12.5 GHz, and the processes of thermalization of carriers from QWD layers do not limit the speed at reverse biases of more than 5 V.