z-logo
open-access-imgOpen Access
Фотодиоды на основе InAsSbP для длин волн 2.6-2.8 mum
Author(s) -
Н.Д. Ильинская,
С.А. Карандашев,
А.А. Лавров,
Б.А. Матвеев,
М.А. Ременный,
Н.М. Стусь,
А.А. Усикова
Publication year - 2018
Publication title -
журнал технической физики
Language(s) - Uncategorized
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2018.02.45414.2371
Subject(s) - materials science

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom