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Изоэлектронные центры кислорода и проводимость кристаллов CdS в сравнении с PbS
Author(s) -
N. K. Morozova,
B. N. Miroshnikov
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.03.45611.8493
Subject(s) - stoichiometry , oxygen , dissolution , lead sulfide , acceptor , chemical physics , chemistry , sulfide , electron , crystallographic defect , materials science , crystallography , nanotechnology , condensed matter physics , physics , quantum dot , organic chemistry , quantum mechanics
AbstractThe influence of oxygen on the electrical properties of PbS are well known. The goal of this study is to compare and reveal this phenomenon in CdS(O) single crystals, which we have studied in detail previously. The experiments are performed for CdS single crystals with a known oxygen concentration, deviation from stoichiometry, and definite set of intrinsic point defects. They allow us to confirm the results described for PbS and clarify their nature. It is shown that the phenomenon is based on the capture of free charge carriers— electrons—by acceptor-like isoelectronic O_S centers with the subsequent formation of associates having a complex structure. Previous conclusions on the dissolution mechanism of oxygen in CdS with deviations from stoichiometry are confirmed. Variations in the electrical properties in oxygen-activated PbS(O), similarly to CdS(O), showed that isoelectronic oxygen centers O_S are present in lead sulfide.

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