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Study of semiconductor valence plasmon line shapes via electron energy-loss spectroscopy in the transmission electron microscope
Author(s) -
Michael K. Kundmann
Publication year - 1988
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6340092
Subject(s) - plasmon , electron energy loss spectroscopy , valence electron , semiconductor , spectroscopy , spectral line , electron , surface plasmon , transmission electron microscopy , scattering , valence (chemistry) , materials science , atomic physics , molecular physics , optics , physics , optoelectronics , quantum mechanics , astronomy

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