Open AccessElectron irradiation effects in silicon at liquid helium temperatures using ac hopping conductivity
Author(s) -
R.E. McKeighen
Publication year - 1971
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/4038630
Subject(s) - vacancy defect , dopant , silicon , impurity , irradiation , electron beam processing , activation energy , materials science , annealing (glass) , acceptor , germanium , analytical chemistry (journal) , doping , helium , atomic physics , crystallography , chemistry , condensed matter physics , metallurgy , nuclear physics , optoelectronics , physics , organic chemistry , chromatography
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