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PL studies of Ce 3+ ‐ and Pr 3+ ‐doped SrS thin films
Author(s) -
Evans D. R.,
Warren G. T.,
Raukas M.,
Happek U.,
Dennis W. M.,
Sun S.S.,
Basun S.,
Kane J.,
Yocom P. N.,
Naman A.,
Holloway P.
Publication year - 1998
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.1985197
Subject(s) - praseodymium , doping , thin film , materials science , electroluminescence , ion , analytical chemistry (journal) , excitation , rare earth , spectral line , optoelectronics , nanotechnology , chemistry , physics , organic chemistry , layer (electronics) , chromatography , quantum mechanics , astronomy , metallurgy
— Both time‐resolved and steady‐state spectroscopic techniques were used to investigate the mechanisms responsible for both the observed increase in luminance and the red shift of the emission frequency that occurs when Ga is introduced during the growth of SrS: Ce 3+ films. We compared the excitation spectra of SrS: Ce 3+ films prepared without Ga to SrS: Ce 3+ and SrS: Pr 3+ ,Ce 3+ films prepared with Ga. In addition, we also studied praseodymium‐doped thin films to probe the local environment of the rare‐earth ion in these materials. Finally, the implications of these results on the electroluminescent (EL) efficiency will be discussed.
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