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Electronic Level Structure and Single Electron Tunneling Effects in CdSe Quantum Rods
Author(s) -
Rothenberg Eli,
Mokari Taleb,
Kazes Miri,
Banin Uri,
Katz David,
Steiner Dov,
Millo Oded
Publication year - 2004
Publication title -
israel journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 54
eISSN - 1869-5868
pISSN - 0021-2148
DOI - 10.1560/rwud-ud6h-f2lu-x23j
Subject(s) - chemistry , quantum tunnelling , scanning tunneling spectroscopy , scanning tunneling microscope , spectroscopy , excited state , band gap , electron , rod , electronic structure , spectral line , condensed matter physics , molecular physics , atomic physics , physics , computational chemistry , medicine , alternative medicine , quantum mechanics , pathology , astronomy
Abstract Optical spectroscopy and scanning tunneling microscopy are used to study the size and shape dependence of the electronic states in CdSe quantum rods. Samples having average rod dimensions ranging from 10 to 60 nm in length and 3.5 to 7 nm in diameter, with aspect ratios varying between 3 to 12, were investigated. Both size‐selective optical spectroscopy and tunneling spectra on single rods show that the level structure depends primarily on the rod diameter and not on length. With increasing diameter, the band gap and the excited state level spacings shift to the red. The level structure is assigned using a multi‐band effective‐mass model. We shall also discuss the effect of single electron charging on the tunneling spectra, possibly reflecting the quantum rod level degeneracy, and its dependence on the tunneling junction parameters.

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