Open AccessThe Improvement of Ohmic Contacts Property in P-Type 4H-SiC LDMOSFET Using Ti(20 nm)/Al(30 nm) Electrodes
Author(s) -
裴紫微,
许恒宇,
万彩萍,
刘金彪,
李俊峰,
刘新宇
Publication year - 2015
Publication title -
smart grid
Language(s) - English
Resource type - Journals
eISSN - 2161-8771
pISSN - 2161-8763
DOI - 10.12677/sg.2015.56036
Subject(s) - ohmic contact , materials science , electrode , optoelectronics , property (philosophy) , nanotechnology , chemistry , layer (electronics) , philosophy , epistemology