Open AccessGrowth and Characterization of Single Crystalline Bi4Ge3O12Fibers for Electrooptic High Voltage Sensors
Author(s) -
S. Wildermuth,
K. Bohnert,
H. Brändle,
Jean-Marie Fourmigué,
Didier Perrodin
Publication year - 2013
Publication title -
journal of sensors
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.399
H-Index - 43
eISSN - 1687-7268
pISSN - 1687-725X
DOI - 10.1155/2013/650572
Subject(s) - materials science , voltage , electric field , fiber , optical fiber , bismuth germanate , bismuth , rod , characterization (materials science) , optics , optoelectronics , composite material , electrical engineering , nanotechnology , physics , medicine , scintillator , alternative medicine , pathology , quantum mechanics , detector , metallurgy , engineering
The micro-pulling-down technique for crystalline fiber growth is employed to grow fibers and thin rods of bismuth germanate, Bi4Ge3O12 (BGO), for use in electrooptic high voltage sensors. The motivation is the growth of fibers that are considerably longer than the typical lengths (100–250 mm) that are achieved by more conventional growth techniques like the Czochralski technique. At a given voltage (several hundred kilovolts in high voltage substation applications) longer sensors result in lower electric field strengths and therefore more compact and simpler electric insulation. BGO samples with lengths up to 850 mm and thicknesses from 300 μm to 3 mm were grown. Particular challenges in the growth of BGO fibers are addressed. The relevant optical properties of the fibers are characterized, and the electrooptic response is investigated at voltages up to
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