Open AccessElectronic Conductivity in a Р+-Ion Implanted Positive Photoresist
Author(s) -
А. Н. Олешкевич,
Н. М. Лапчук,
В. Б. Оджаев,
И. А. Карпович,
В. С. Просолович,
Д. И. Бринкевич,
С. Д. Бринкевич
Publication year - 2020
Publication title -
russian microelectronics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.214
H-Index - 17
eISSN - 1608-3415
pISSN - 1063-7397
DOI - 10.1134/s1063739719060076
Subject(s) - materials science , photoresist , electron paramagnetic resonance , ion , delocalized electron , conductivity , unpaired electron , silicon , analytical chemistry (journal) , electron , boron , nuclear magnetic resonance , layer (electronics) , chemistry , optoelectronics , nanotechnology , organic chemistry , physics , chromatography , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom